Product Description

Item: Solar Cell Grade Silicon Wafer Growth Method: CZ Conductivity Type: P Doping Agent: B Orientation: **0 Resistivity: 0.5>6 ohm/cm Size(s): **5 x **5 mm, **6 x **6 mm Carrier Lifetime: >*0 us Oxygen Content: <1.0 x *0^*8 cm cubed Carbon Content: <5.0 x *0^*6 cm cubed Thickness: ******0 microns TTV: < *5 microns Surface Quality: Free from defects (pinholes, cracks, scratches).